| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,414 pcs
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1414 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies IPS032G is a dual low-side SMART POWER MOSFET switch designed for applications requiring high reliability in harsh environments. It combines a HEXFET POWER MOSFET with a gate driver, providing comprehensive protection including over-current, over-temperature, and ESD protection.
Key electrical characteristics include a maximum drain-to-source voltage of 47V, a continuous output current of 1.65A, and a typical Rds On of 45mOhm. The device features active clamp for enhanced avalanche capability and logic-level input with active high enable. The shutdown current is rated at 12A, and the device restarts upon input cycling.
Packaged in a 16-SOIC surface mount configuration, the IPS032G is suitable for various power management tasks. Its operating temperature range is -40°C to 150°C (TJ), making it robust for demanding applications. The integrated protection mechanisms simplify design and enhance system safety.
This dual MOSFET switch is ideal for applications needing reliable power control and protection, such as motor control, power supplies, and industrial automation. The combination of performance and protection features makes it a versatile component for demanding designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.32 | $0.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 47V.
The typical Rds On is 45mOhm.
The continuous output current is 1.65A.
The IPS032G includes current limiting (fixed) and over-temperature protection.
The operating temperature range is -40°C to 150°C (TJ).
The IPS032G is supplied in a 16-SOIC package.