| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,200 pcs
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3200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies IPS031G is a fully protected single low-side SMART POWER MOSFET switch. It combines a HEXFET POWER MOSFET with a gate driver, providing over-current, over-temperature, and ESD protection.
Key electrical specifications include a maximum drain-to-source voltage (Vds) of 47V, a continuous current rating of 2.2A, and a typical Rds On of 45mOhm. The device features a shutdown current of 12A and an active clamp voltage of 50V, enhancing avalanche capability for inductive load demagnetization.
Designed for harsh environments, the IPS031G offers high reliability. Its driver enables short switching times and protection by shutting off the MOSFET when temperature exceeds 165°C or drain current reaches 12A. The device restarts upon input cycling.
Packaged in an 8-SOIC (0.154", 3.90mm Width) format, the IPS031G is suitable for surface mounting. Its operating temperature range is -40°C to 150°C (TJ).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.32 | $0.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vds) is 47V.
The maximum continuous current is 2.2A.
The typical on-resistance (Rds(on)) is 45mOhm.
The operating junction temperature range is -40°C to 150°C.
The IPS031G is available in an 8-SOIC surface-mount package.