| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
95 pcs
|
95 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Maximum Input Voltage | |
| Storage Temperature |
The IPS024G is a quad fully protected low-side SMART POWER MOSFET switch designed for harsh environments. It integrates a HEXFET POWER MOSFET with a gate driver, providing over-current, over-temperature, and ESD protection.
Key electrical specifications include a maximum drain-to-source voltage of 47V, a maximum input voltage of 7V, and a shutdown current of 6A. The device features a typical Rds(on) of 150 mOhm and a clamp voltage of 50V. Switching times are approximately 1.5µs.
This device is housed in a 16-Lead SOIC package. It includes features such as active clamp for enhanced avalanche capability, low current and logic level input, and automatic restart upon input cycling. The driver ensures short switching times and efficient protection by turning off the power MOSFET when temperature exceeds 165°C or drain current reaches 5A.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.00 | $3.00 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The resistance on state of the IPS024G is 150 mOhm.
The clamp voltage of the IPS024G is 50 V.
The switching time of the IPS024G is 1.5 microseconds.
The IPS024G is housed in a 16-Lead SOIC package.
The maximum drain to source voltage of the IPS024G is 47 V.
The maximum input voltage for the IPS024G is 7 V.
The maximum junction temperature of the IPS024G is 150°C.