| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies IPS022GTR is a dual low-side SMART POWER MOSFET switch designed for high reliability in harsh environments. It integrates HEXFET POWER MOSFETs with gate drivers, providing comprehensive protection features including over-current shutdown (5A), over-temperature shutdown (165°C), and ESD protection.
This device operates with a continuous drain current of 1A and a maximum drain-to-source voltage of 35V. It features a low Rds(on) of 150mΩ (max) and a fast switching time of 1.5µs. The input interface is logic-level compatible, accepting a high-level input voltage of 4V and a low-level input voltage of 0.5V.
The IPS022GTR is housed in an 8-SOIC package suitable for surface mounting. Its robust design and integrated protection make it ideal for applications requiring reliable power switching and fault management. The device automatically restarts after input cycling and features active clamp for enhanced avalanche capability.
Key electrical characteristics include a maximum input voltage of 7V and a maximum continuous diode current of 1.4A. The operating temperature range is -40°C to 150°C (TJ).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.32 | $0.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IPS022GTR is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
The operating temperature range is -40°C to 150°C (junction temperature).
The continuous drain current (Ids) is 1A at 85°C ambient with IN=5V and thermal resistance of 100°C/W.
The maximum drain to source voltage (Vds) is 47V.
The maximum Rds(on) is 150mΩ, with typical value of 130mΩ.
The IPS022GTR provides fixed current limiting and over-temperature protection.
The IPS022GTR has two outputs.