| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Maximum Input Voltage |
The Vishay Dale IPS022G is a dual fully protected low-side SMART POWER MOSFET switch. It integrates a HEXFET POWER MOSFET with a gate driver, providing comprehensive protection and high reliability for demanding applications.
Key features include over-temperature shutdown (165°C), over-current shutdown (5A), active clamp, and ESD protection. The device offers low current and logic-level input, with a typical Rds(on) of 150mΩ. It operates with a maximum drain-to-source voltage of 47V and a maximum input voltage of 7V.
Designed for harsh environments, the IPS022G ensures efficient protection by turning off the power MOSFET when critical temperature or current limits are reached. It restarts upon input cycling. The active clamp enhances avalanche capability, making it suitable for inductive load demagnetizations.
This component comes in an 8-lead SOIC package. Its robust design and integrated protection features make it ideal for applications requiring high reliability and safety.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain-to-source voltage is 35V.
The maximum continuous drain current is 1A at 85°C ambient temperature.
The IPS022G is housed in an 8-Lead SOIC package.
The maximum Rds(on) is 150mΩ.
The IPS022G has 4kV ESD protection for the Human Body Model and 0.5kV for the Machine Model.