| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Fault Protection | |
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The Infineon Technologies IPS022G is a dual fully protected low-side SMART POWER MOSFET switch designed for harsh environments. It integrates a HEXFET POWER MOSFET with a gate driver, providing comprehensive protection features including over-current shutdown (5A), over-temperature shutdown (165°C), and ESD protection.
This device offers a low Rds(on) of 150mΩ maximum and a clamp voltage of 50V. The active clamp feature enhances avalanche capability, making it suitable for inductive load demagnetization. It operates with a logic level input and features a 1:1 ratio.
The IPS022G is housed in an 8-SOIC surface mount package, facilitating integration into compact designs. Its robust protection mechanisms ensure high reliability for demanding applications.
Key electrical characteristics include a maximum drain-to-source voltage of 47V and a continuous drain current of 1A at 85°C ambient. The switching times are approximately 1.5µs for both turn-on and turn-off.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.32 | $0.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical on-resistance is 130 mOhm, with a maximum of 150 mOhm.
The maximum drain-source voltage is 47V, with a continuous rating of 35V.
The operating junction temperature range is -40°C to 150°C.
The device is available in an 8-SOIC surface mount package (0.154", 3.90mm width).
The continuous drain current is 1A at 85°C ambient temperature.
Yes, it includes fixed current limiting and over-temperature protection.
High-level input is 4V to 6V, low-level input is 0V to 0.5V.