| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15,250 pcs
|
15250 pcs | On Request | 1 | On Request | On Request | 1925+ | On Request | On Request | |
|
5,040 pcs
|
5040 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
223 pcs
|
223 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Lead Style | |
| Mounting Type | |
| Power Dissipation | |
| SVHC Present |
The Infineon IPP90R1K2C3 is a high-performance N-channel power MOSFET from the CoolMOS™ 900V family. Designed for demanding applications, it features a breakdown voltage of 900V and a maximum on-state resistance of 1.2 Ohms at 25°C.
Key electrical characteristics include a typical gate charge of 28 nC and a continuous drain current of 5.1A at 25°C. The device is qualified according to JEDEC standards for target applications such as Quasi Resonant Flyback/Forward topologies, PC Silverbox, consumer electronics, and industrial SMPS.
Packaged in a PG-TO220 package, the IPP90R1K2C3 is suitable for through-hole mounting. Its robust design includes extreme dv/dt rating and high peak current capability, making it a reliable choice for power conversion systems requiring efficiency and durability.
Environmental compliance includes RoHS3 compliance and a Moisture Sensitivity Level (MSL) of 1. The operating temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 900 V.
The typical gate threshold voltage is 3 V.
The maximum on-state resistance at 25°C is 1.2 Ohms.
The typical total gate charge is 28 nC.
The IPP90R1K2C3 is supplied in the PG-TO220 package.
The IPP90R1K2C3 is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.