| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,100 pcs
|
1100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPP65R600C6 is an N-Channel power MOSFET from Infineon Technologies, part of the CoolMOS C6 series. It is designed for high-voltage power conversion applications.
Key electrical specifications include a drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 7.3A at 25°C case temperature. The device has a maximum on-resistance (Rds(on)) of 600mOhm at a gate drive voltage of 10V and a drain current of 2.1A. The gate threshold voltage is a maximum of 3.5V at 210µA drain current.
The MOSFET is housed in a standard TO-220-3 through-hole package (supplier package PG-TO220-3-1), suitable for easy mounting on heatsinks. It can dissipate up to 63W of power and operates over a junction temperature range of -55°C to 150°C.
The maximum drain-to-source voltage (Vdss) is 650V.
The continuous drain current (Id) is 7.3A at 25°C case temperature.
The maximum on-resistance (Rds(on)) is 600mOhm at a gate voltage of 10V and a drain current of 2.1A.
It comes in a TO-220-3 through-hole package (supplier device package PG-TO220-3-1).
The operating junction temperature range is -55°C to 150°C.
The RoHS status is listed as RoHS3 Compliant, but this information is unverified.