| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,322 pcs
|
1322 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
449 pcs
|
449 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Mounting Type |
The Infineon IPP65R125C7 is a high-voltage power MOSFET from the CoolMOS C7 series, designed using the superjunction principle. This technology provides benefits such as higher system efficiency, reduced gate charge, and improved reliability.
Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 700V, a maximum on-resistance (RDS(on)) of 125mΩ, and a typical gate charge (Qg) of 35nC. It also features a pulsed drain current (ID,pulse) of 75A and an output capacitance (Eoss) of 4.2µJ at 400V.
The device is packaged in a PG-TO 220 package suitable for through-hole mounting. It is Pb-free and halogen-free, meeting industrial grade application standards.
Applications for the IPP65R125C7 include PFC stages and hard-switching PWM stages for computing, server, telecom, UPS, and solar power systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.75 | $0.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (Vds) at Tj,max is 700V.
The maximum On-Resistance (RDS(on)) is 125mΩ.
The typical Gate Charge (Qg) is 35nC.
The IPP65R125C7 is available in a PG-TO 220 package.
The RoHS Status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH Status is REACH Unaffected.