| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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964 pcs
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964 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| SVHC Present |
The Infineon IPP65R095C7 is a high-performance N-channel power MOSFET utilizing Infineon's CoolMOS C7 technology. Designed for high voltage applications, this transistor features a maximum drain-source voltage of 700V and a maximum on-resistance of 95mΩ. Its typical gate charge is 45nC, contributing to its fast switching characteristics.
This MOSFET is suitable for demanding applications such as Power Factor Correction (PFC) stages and hard-switching PWM stages. It is packaged in a TO-220 form factor, suitable for through-hole mounting. The component is Pb-free and halogen-free, aligning with environmental standards.
Key benefits include improved system efficiency, higher frequency operation, and increased power density. The CoolMOS C7 technology provides enhanced reliability and ease of use for designers.
The maximum drain-source voltage (VDS @ Tj,max) for the IPP65R095C7 is 700V.
The maximum on-resistance (RDS(on),max) for the IPP65R095C7 is 95mΩ.
The typical gate charge (Qg.typ) for the IPP65R095C7 is 45nC.
The IPP65R095C7 MOSFET is supplied in the PG-TO 220 package.
The RoHS status for the IPP65R095C7 is listed as RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the IPP65R095C7 is 1 Unlimited.
The IPP65R095C7 features Pb-free plating.