| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,020 pcs
|
2020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPP65R065C7XKSA1 is an N-Channel 650V power MOSFET manufactured by Infineon Technologies. Part of the CoolMOS C7 superjunction series, it is designed for high-efficiency power conversion. The device has a maximum drain-to-source voltage of 650V, a continuous drain current of 33A at case temperature, and a typical gate charge of 64nC. Maximum drain-source on-resistance is 65mΩ at 10V gate drive.
The CoolMOS C7 technology reduces gate charge and output capacitance stored energy (8µJ at 400V) while providing high dv/dt ruggedness. This makes the device suitable for fast-switching applications. Typical uses include power factor correction (PFC) stages and hard-switching PWM stages in computing, server, telecom, UPS, and solar systems.
The MOSFET comes in a through-hole TO-220-3 package (PG-TO220-3) and supports a junction temperature range of -55°C to +150°C. Maximum power dissipation is 171W at case temperature. The device features Pb-free plating and a halogen-free mold compound.
| Qty | Low | High |
|---|---|---|
| 500+ | $4.07 | $4.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 650V, and the device is rated at 700V at maximum junction temperature.
It is available in a through-hole TO-220-3 package (PG-TO220-3).
The junction temperature range is -55°C to +150°C.
It is listed as RoHS3 compliant in the database and the datasheet confirms Pb-free plating.
33A at case temperature.
Maximum 65mΩ at 17.1A and 10V gate drive.
64nC typical at 10V gate voltage.