| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,451 pcs
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4451 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPP60R750E6 is an N-Channel Power MOSFET manufactured by Infineon Technologies. It utilizes MOSFET (Metal Oxide) technology and is designed for high-voltage switching applications.
Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 600V, a continuous drain current (Id) of 5.7A (at Tc), and a maximum on-resistance (Rds(on)) of 750mOhm at a gate drive of 10V. The input capacitance (Ciss) is 373 pF at Vds = 100V, and the gate charge (Qg) is 17.2 nC at Vgs = 10V. The gate threshold voltage (Vgs(th)) has a maximum of 3.5V at 170µA.
Thermal characteristics include a maximum power dissipation of 48W (at Tc) and an operating junction temperature range of -55°C to 150°C. The device comes in a through-hole TO-220-3 package (PG-TO220-3-1) suitable for easy mounting on heat sinks.
Environmental compliance data indicates RoHS3 compliance, REACH unaffected status, and MSL level 1 (unlimited). Please note that these compliance statuses are unverified and should be confirmed with the manufacturer for critical designs.
The maximum drain-source voltage (Vdss) is 600 V.
The device is available in a TO-220-3 package (PG-TO220-3-1) with through-hole mounting.
The operating junction temperature range is -55°C to 150°C.
According to the data, it is RoHS3 compliant, but this is unverified and should be confirmed.
The maximum continuous drain current (Id) is 5.7 A at case temperature (Tc).
The maximum gate threshold voltage (Vgs(th)) is 3.5 V at a drain current of 170 µA.
The maximum power dissipation is 48 W at case temperature (Tc).