IPP60R600CP IPP60R600CP is an N-Channel power MOSFET from Infineon Technologies. It features 600V drain-source voltage, 6.1A continuous drain current, and 600mOhm on-resistance, in a TO-220-3 through-hole package.
Mfr Part #:

IPP60R600CP

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IPP60R600CP is an N-Channel power MOSFET from Infineon Technologies. It features 600V drain-source voltage, 6.1A continuous drain current, and 600mOhm on-resistance, in a TO-220-3 through-hole package.
✓ Total Stock: 325 pcs
$ Price Range: $1.02

IPP60R600CP Available from 1 distributor

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✓ Non-Authorised
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325 pcs
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IPP60R600CP Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPP60R600CP Description

Short technical summary and product information.

The IPP60R600CP is an N-Channel power MOSFET manufactured by Infineon Technologies. It is designed for high-voltage switching applications and offers a drain-source voltage rating of 600V and a continuous drain current of 6.1A at case temperature. The device features a maximum on-resistance of 600mOhm at a gate drive of 10V and a drain current of 3.3A.

 

Key electrical characteristics include a gate charge of 27nC at 10V and an input capacitance of 550pF at 100V drain-source voltage. The gate threshold voltage is 3.5V maximum at 220µA. The device can dissipate up to 60W at case temperature and operates over a junction temperature range of -55°C to 150°C.

 

The IPP60R600CP is housed in a through-hole TO-220-3 package (supplier device package PG-TO220-3-1), making it suitable for traditional PCB mounting. The low on-resistance and moderate gate charge make it a good fit for power supply circuits, DC-DC converters, and motor control applications.

IPP60R600CP Quick Information

Product Type: Power MOSFET
Series: CoolMOS CP
Canonical Name: IPP60R600CP - N-Channel Power MOSFET, 600V, 6.1A, TO-220-3
Subcategory: N-Channel MOSFET

IPP60R600CP Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPP60R600CP Estimated Pricing

Qty Low High
295+ $1.02 $1.02

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPP60R600CP Features

  • N-Channel MOSFET with 600V drain-source voltage.
  • Continuous drain current of 6.1A at case temperature.
  • Low on-resistance of 600mOhm at 10V gate drive.
  • Through-hole TO-220-3 package for easy mounting.
  • Operating temperature range from -55°C to 150°C.

IPP60R600CP Applications

  • Used in high-voltage DC-DC converters.
  • Ideal for power supply switching circuits.
  • Suitable for motor control applications.
  • Can be used in inverter circuits.

IPP60R600CP FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of IPP60R600CP?

The IPP60R600CP is packaged in a TO-220-3 through-hole package with supplier device package PG-TO220-3-1.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is this component RoHS compliant?

The RoHS status is listed as RoHS3 compliant, but this is unverified and has low confidence.

What is the drain-source voltage rating?

The maximum drain-source voltage (Vdss) is 600V.

What is the continuous drain current rating?

The maximum continuous drain current is 6.1A at case temperature.

What is the maximum on-resistance?

The maximum on-resistance is 600mOhm at a drain current of 3.3A and gate-source voltage of 10V.

What is the gate threshold voltage?

The maximum gate threshold voltage is 3.5V at a drain current of 220µA.

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