| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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544 pcs
|
544 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPP60R600C6 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. It features a drain-to-source voltage rating of 600V and a continuous drain current of 7.3A at case temperature. The maximum on-resistance is 600mOhm at Vgs=10V and Id=2.4A. This device is designed for high-voltage switching applications.
With a gate charge of 20.5nC and input capacitance of 440pF, the IPP60R600C6 offers efficient switching performance. The maximum power dissipation is 63W at case temperature. The operating junction temperature range is -55°C to 150°C.
The MOSFET is housed in a TO-220-3 through-hole package (PG-TO220-3-1), suitable for easy mounting on heatsinks. It is RoHS3 compliant and has an MSL of 1 (unlimited).
600V.
7.3A at case temperature.
600mOhm at Vgs=10V, Id=2.4A.
TO-220-3 (PG-TO220-3-1).
-55°C to 150°C junction.
Yes, RoHS3 compliant.
20.5nC at Vgs=10V.