| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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199 pcs
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199 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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The IPP60R380E6 is an N-Channel power MOSFET from Infineon's CoolMOS family, designed for high-voltage switching applications. It has a drain-source voltage rating of 600V and a continuous drain current of 10.6A at case temperature. The device features a maximum on-resistance of 380mOhm at 3.8A gate drive of 10V. Gate charge is 32nC and input capacitance is 700pF, enabling efficient switching. The MOSFET is through-hole mounted in a TO-220-3 package (PG-TO220-3-1). Operating junction temperature range is -55°C to 150°C. Maximum power dissipation is 83W. The device is RoHS3 compliant and has MSL level 1. It is suitable for power supplies, inverters, and motor control circuits.
600V.
10.6A at case temperature.
380mOhm max at 3.8A, 10V.
TO-220-3 (PG-TO220-3-1).
-55°C to 150°C junction.
RoHS3 compliant (unverified).
32nC at 10V.