| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,034 pcs
|
7034 pcs | On Request | 1 | On Request | On Request | 1641+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Mounting Type | |
| Storage Temperature | |
| Tape & Reel |
The Infineon IPP60R280E6 is a high-voltage power MOSFET from the CoolMOS E6 series, utilizing superjunction technology for enhanced performance. This transistor is designed for applications requiring high efficiency and reliability, such as PFC stages, hard switching PWM stages, and resonant switching PWM stages.
Key electrical characteristics include a maximum drain-source voltage of 650V, a maximum on-resistance of 0.28 Ohms, and a typical gate charge of 43nC. It also features a pulsed drain current capability of 40A and an energy loss of 3.7µJ at 400V. The device exhibits excellent commutation ruggedness and is easy to drive.
Packaged in a PG-TO220 through-hole configuration, the IPP60R280E6 is suitable for various power management solutions including adapters, LCD/PDP TVs, lighting, servers, and UPS systems. It is JEDEC qualified, Pb-free plating, and Halogen-free.
This MOSFET technology is engineered to reduce switching and conduction losses, enabling more efficient, compact, lighter, and cooler power supplies. Its design prioritizes ease of use without sacrificing performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) at Tj,max is 650V.
The maximum on-resistance (Rds(on)) is 0.28 Ohms.
The typical gate charge (Qg) is 43nC.
The IPP60R280E6 is supplied in a PG-TO220 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.