| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
3,147 pcs
|
3147 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| SVHC Present | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Infineon IPP60R280C6 is an N-channel power MOSFET designed for high-performance applications. It utilizes Infineon's CoolMOS™ technology, offering a breakdown voltage of up to 600V and a low Rds(on) of 280 mOhm at 15A and 10V gate-source voltage. This MOSFET features a gate threshold voltage of 3V and a gate charge of 58 nC at 10V.
With a continuous drain current of 30A at 25°C and a drain-to-source voltage of 600V, the IPP60R280C6 is suitable for various power conversion and switching applications. The device has an input capacitance of 1300 pF at 100V and a zero-gate voltage drain current of 250 µA at 600V.
Packaged in a PG-TO220-3 configuration, this MOSFET is designed for through-hole mounting. Its robust construction and electrical characteristics make it a reliable choice for demanding power designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 600V.
The maximum Rds(on) is 280 mOhm at 15A and 10V gate drive.
The continuous drain current is 30A at a case temperature of 25°C.
The device is available in a PG-TO220-3 through-hole package.
The maximum gate threshold voltage is 3V.
The device uses Infineon's CoolMOS™ technology.