Mfr Part #:

IPP60R190P6

Mfr Name: Infineon

The Infineon IPP60R190P6 is a 650V CoolMOS P6 series N-channel power MOSFET. It offers low conduction and switching losses, making it suitable for efficient power applications.

✓ Total Stock: 10,000 pcs

$ Price Range: $0.71

IPP60R190P6 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Fe Components ✓ Non-Authorised Inventory information	10,000 pcs On Request	10000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPP60R190P6 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Gate Charge	37nC
Halogen Free	Yes
Lead Spacing	10.16 mm
Mounting Type	Through Hole
Storage Temperature	°C ~ °C
Tape & Reel	No

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IPP60R190P6 Description

Short technical summary and product information.

The Infineon IPP60R190P6 is a high-voltage N-channel power MOSFET from the CoolMOS P6 series, designed using the superjunction principle. This technology provides significant benefits for high-voltage power applications, including extremely low switching and conduction losses, leading to more efficient, compact, lighter, and cooler designs.

Key electrical characteristics include a maximum Drain-Source Voltage (Vds) of 650V, a maximum On-Resistance (Rds(on)) of 190mΩ, and a typical Gate Charge (Qg) of 37nC. It also features a pulsed drain current (ID,pulse) of 57A and an energy loss (Eoss) of 4.9µJ at 400V. The body diode has a di/dt rating of 500 A/µs.

This MOSFET is designed for ease of use and drive, offering increased dv/dt ruggedness and high commutation ruggedness. It is qualified for industrial-grade applications according to JEDEC standards. The component is Pb-free plated and uses a halogen-free mold compound.

The IPP60R190P6 is supplied in a PG-TO 220 package suitable for through-hole mounting. Its features make it ideal for applications such as PFC stages, hard-switching PWM stages, and resonant switching stages in power supplies, adapters, lighting, servers, and UPS systems.

IPP60R190P6 Quick Information

Product Type: Power MOSFET

Series: P6

Canonical Name: Infineon IPP60R190P6 CoolMOS P6 Power MOSFET

Subcategory: Power MOSFET

IPP60R190P6 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

IPP60R190P6 Estimated Pricing

Qty	Low	High
1+	$0.71	$0.71

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPP60R190P6 Features

650V Drain-Source Voltage rating.
Low 190mΩ maximum On-Resistance.
Efficient 37nC typical Gate Charge.
TO-220 package for through-hole mounting.
Pb-free and Halogen-free construction.

IPP60R190P6 Applications

Ideal for PFC power stages.
Suitable for hard-switching PWM.
Used in resonant switching circuits.
Applications in adapters and lighting.
Designed for server and telecom power.

IPP60R190P6 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum Drain-Source Voltage for the IPP60R190P6?

The maximum Drain-Source Voltage (Vds) at Tj,max is 650V.

What is the maximum On-Resistance of the IPP60R190P6 MOSFET?

The maximum On-Resistance (Rds(on)) is 190mΩ.

What is the typical Gate Charge for this Infineon MOSFET?

The typical Gate Charge (Qg) is 37nC.

What package type is the IPP60R190P6 supplied in?

The IPP60R190P6 is supplied in a PG-TO 220 package.

Is the IPP60R190P6 RoHS compliant?

Yes, the RoHS Status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

Does the IPP60R190P6 meet REACH regulations?

The REACH Status is REACH Unaffected.