| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The Infineon IPP60R170CFD7 is a high-performance N-channel power MOSFET from the CoolMOS CFD7 series. Designed for soft switching applications such as phase-shift full-bridge (ZVS) and LLC topologies, this transistor offers enhanced efficiency and reliability.
Key electrical characteristics include a maximum Drain-Source Voltage (VDS) of 650V, a maximum On-Resistance (RDS(on)) of 170mΩ, and a typical Gate Charge (Qg) of 28nC. Its ultra-fast body diode and best-in-class reverse recovery charge (Qrr) contribute to superior performance in resonant circuits.
Packaged in a PG-TO 220-3 through-hole configuration, the IPP60R170CFD7 is suitable for applications requiring high power density and robust hard commutation. It is qualified for industrial applications according to JEDEC standards.
This MOSFET is optimized for server, telecom, and EV charging applications, enabling lighter, cooler, and more efficient power solutions.
650V.
170mΩ maximum.
28nC typical.
51A.
PG-TO 220-3.
Through hole.
1300A/µs.