| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,540 pcs
|
1540 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPP60R165CP is an N-Channel enhancement mode power MOSFET from Infineon Technologies, utilizing CoolMOS™ technology. It features a drain-source breakdown voltage of 600V and a continuous drain current of 21A at 25°C case temperature. The maximum drain-source on-resistance is 165mOhm at a gate drive voltage of 10V and 12A drain current. The device offers a maximum gate charge of 52nC and input capacitance of 2000pF, suitable for high-efficiency switching applications. It is offered in a through-hole TO-220-3 package (PG-TO220-3-1 supplier package). The maximum power dissipation is 192W. Operating junction temperature range is -55°C to 150°C. This MOSFET is designed for power supply, lighting, and industrial applications requiring high voltage and low on-resistance.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.43 | $5.43 |
| 10+ | $3.56 | $3.56 |
| 100+ | $2.65 | $2.65 |
| 500+ | $2.21 | $2.21 |
| 1,000+ | $2.06 | $2.06 |
| 2,500+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
21A at 25°C case temperature.
165mOhm maximum at 12A, 10V.
TO-220-3 (PG-TO220-3-1).
-55°C to 150°C (junction).
Yes, RoHS3 compliant (unverified).
52nC maximum at 10V.