| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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350 pcs
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350 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Forward Voltage | |
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| Industrial Grade | |
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| Medical Grade | |
| Military Grade | |
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| Tape & Reel |
This Infineon IPP60R160P6XKSA1 is a high-performance N-Channel MOSFET belonging to the CoolMOS P6 series. It is designed for power applications requiring a maximum drain-source voltage of 600V and can handle a continuous drain current of up to 23.8A. The MOSFET exhibits a low maximum drain-source resistance of 160mΩ, contributing to efficient power transfer.
Packaged in a standard TO-220 through-hole configuration, this component is suitable for various electronic designs. It operates within a minimum temperature of -55°C and has a typical gate charge of 44nC. The forward voltage is rated at 0.9V.
Key electrical characteristics include a maximum power dissipation of 176W. The component's physical dimensions are a length of 10.36mm and a height of 9.45mm. This MOSFET is a reliable choice for power management circuits and other applications demanding robust semiconductor performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 23.8A.
The maximum drain-source voltage is 600V.
The package type is TO-220.
The minimum operating temperature is -55°C.
The typical gate charge is 44nC.