| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
1,173 pcs
|
1173 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Package / Case |
The Infineon IPP60R125P6 is a high-voltage N-channel power MOSFET from the CoolMOS P6 series. This technology is designed according to the superjunction principle, providing benefits of fast switching and ease of use.
Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 650V, a maximum On-Resistance (Rds(on)) of 125mΩ, and a typical Gate Charge (Qg) of 56nC. It also features a pulsed drain current (Id,pulse) of 87A and an energy loss (Eoss) of 7.2 µJ at 400V.
The device exhibits increased MOSFET dv/dt ruggedness and very high commutation ruggedness. It is Pb-free plated and uses a halogen-free mold compound, making it suitable for industrial-grade applications.
Packaged in a TO-220 case, the IPP60R125P6 is designed for applications such as PFC stages, hard-switching PWM stages, and resonant switching stages found in PC power supplies, adapters, TVs, lighting, servers, and UPS systems.
The maximum Drain-Source Voltage (Vds) is 650V.
The maximum On-Resistance (Rds(on)) is 125 mΩ.
The typical Gate Charge (Qg) is 56 nC.
The IPP60R125P6 is supplied in a PG-TO 220 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.