Mfr Part #:

IPP60R120P7

Mfr Name: Infineon

The Infineon IPP60R120P7 is a 600V N-channel CoolMOS P7 power MOSFET. It offers low switching and conduction losses, making it efficient for power applications.

✓ Total Stock: 7,126 pcs

IPP60R120P7 Available from 2 distributors

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	6,987 pcs On Request	6987 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	139 pcs On Request	139 pcs	On Request	1	On Request	On Request	23+	On Request	On Request

IPP60R120P7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Gate Charge	36nC
Lead Style	Through-Hole
Mounting Type	Through Hole
Package / Case	PG-TO 220-3

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IPP60R120P7 Description

Short technical summary and product information.

The Infineon IPP60R120P7 is a 600V N-channel power MOSFET from the CoolMOS P7 series, built on Infineon's superjunction technology. This 7th generation platform combines the benefits of fast switching with excellent ease of use, including low ringing tendency and robust body diode performance.

Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 650V, a maximum On-Resistance (Rds(on)) of 120mΩ, and a typical Gate Charge (Qg) of 36nC. The device also features a pulsed drain current (Id,pulse) of 78A and an energy loss (Eoss) of 4.0µJ at 400V. Its body diode has a diF/dt rating of 900 A/µs.

Designed for high-voltage power applications, the IPP60R120P7 is suitable for hard and soft switching applications such as PFC and LLC stages. Its features contribute to more efficient, compact, and cooler switching applications. The MOSFET is housed in a PG-TO 220-3 package and is designed for through-hole mounting.

This MOSFET is fully qualified according to JEDEC for Industrial Applications, offering significant reduction in switching and conduction losses, and excellent ESD robustness greater than 2kV (HBM).

IPP60R120P7 Quick Information

Product Type: MOSFET

Series: CoolMOS P7

Canonical Name: Infineon IPP60R120P7 N-channel Power MOSFET

Subcategory: N-Channel Power MOSFET

IPP60R120P7 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPP60R120P7 Features

650V Drain-Source Voltage rating.
120mΩ maximum On-Resistance.
36nC typical Gate Charge.
Suitable for hard and soft switching.
PG-TO 220-3 through-hole package.

IPP60R120P7 Applications

Used in PFC stages.
Suitable for LLC resonant stages.
Ideal for hard switching PWM.
Applications include servers and UPS.

IPP60R120P7 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum Drain-Source Voltage for the IPP60R120P7?

The maximum Drain-Source Voltage (Vds) at Tj,max is 650V.

What is the maximum On-Resistance of the IPP60R120P7?

The maximum On-Resistance (Rds(on)) is 120mΩ.

What is the typical Gate Charge for this MOSFET?

The typical Gate Charge (Qg) is 36nC.

What package type is the IPP60R120P7 supplied in?

The IPP60R120P7 is supplied in a PG-TO 220-3 package.

What is the RoHS status of the IPP60R120P7?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the IPP60R120P7?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

What is the REACH status for the IPP60R120P7?

The REACH status is REACH Unaffected.