| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,238 pcs
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3238 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
The IPP60R099P7 is a 650V N-Channel power MOSFET from Infineon Technologies' CoolMOS P7 series, built on the 7th generation superjunction (SJ) platform. It features a maximum on-state resistance of 99 mOhm and a typical total gate charge of 45 nC, enabling efficient switching with reduced conduction and switching losses.
This device is designed for ease of use with low ringing tendency, outstanding body diode ruggedness against hard commutation (900 A/µs typical), and excellent ESD robustness of greater than 2 kV (HBM). It is suitable for both hard switching (PFC) and soft switching (LLC) topologies.
The IPP60R099P7 is housed in a PG-TO220-3 through-hole package, offering a compact and robust solution for a wide range of power conversion applications.
The maximum drain-source voltage (at Tj,max) is 650 V.
The maximum on-state resistance is 99 mOhm.
The IPP60R099P7 is housed in a PG-TO220-3 through-hole package.
The typical total gate charge is 45 nC.
The ESD robustness is greater than 2 kV (HBM).
The IPP60R099P7 is based on Infineon's CoolMOS P7 superjunction technology.