IPP60R099CPXKSA1 N-Channel MOSFET with 650V drain-source voltage, 31A continuous drain current, and 99mOhm on-resistance. Housed in a TO-220-3 through-hole package.
Mfr Part #:

IPP60R099CPXKSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET with 650V drain-source voltage, 31A continuous drain current, and 99mOhm on-resistance. Housed in a TO-220-3 through-hole package.
✓ Total Stock: 2,020 pcs
$ Price Range: $3.71 - $7.64

IPP60R099CPXKSA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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2,020 pcs
2020 pcs On Request 1 On Request On Request On Request On Request On Request

IPP60R099CPXKSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPP60R099CPXKSA1 Description

Short technical summary and product information.

The IPP60R099CPXKSA1 is an N-channel power MOSFET manufactured by Infineon Technologies. It features a maximum drain-source voltage of 650V and a continuous drain current of 31A at case temperature. The device has a typical on-resistance of 99mOhm at a gate drive of 10V and 18A drain current. This makes it suitable for high-voltage switching applications in power supplies and converters.

 

The MOSFET has a gate threshold voltage of 3.5V maximum and can handle a maximum power dissipation of 255W. It is designed for through-hole mounting in a TO-220-3 package, with the supplier device package designated as PG-TO220-3. The operating junction temperature range is -55°C to 150°C.

 

This device is RoHS compliant and has an MSL level of 1 (unlimited). It is commonly used in applications such as switched-mode power supplies, motor drives, and industrial power control.

IPP60R099CPXKSA1 Quick Information

Product Type: N-Channel MOSFET
Series: CoolMOS CP
Canonical Name: Infineon IPP60R099CPXKSA1 N-Channel MOSFET, 650V, 31A, TO-220-3
Subcategory: Single MOSFET

IPP60R099CPXKSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPP60R099CPXKSA1 Estimated Pricing

Qty Low High
1+ $7.64 $7.64
10+ $4.40 $4.40
100+ $4.04 $4.04
500+ $3.71 $3.71

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPP60R099CPXKSA1 Features

  • 650V maximum drain-source voltage.
  • 31A continuous drain current at case temperature.
  • 99mOhm typical on-resistance at 10V gate drive.
  • TO-220-3 through-hole package.
  • Operating junction temperature range -55°C to 150°C.

IPP60R099CPXKSA1 Applications

  • Ideal for high-voltage power supply circuits.
  • Used in motor drive and industrial control systems.
  • Suitable for switched-mode power converters.
  • Applicable for power factor correction circuits.

IPP60R099CPXKSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IPP60R099CPXKSA1?

650V.

What is the package type of the IPP60R099CPXKSA1?

TO-220-3 through-hole package, also designated as PG-TO220-3.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the IPP60R099CPXKSA1 RoHS compliant?

The device is listed as RoHS3 compliant, but this status is unverified.

What is the maximum drain current?

31A continuous at case temperature.

What is the typical on-resistance?

99mOhm maximum at 10V gate voltage and 18A drain current.

What is the gate threshold voltage?

Maximum 3.5V at 1.2mA drain current.

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