| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,520 pcs
|
9520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IPP60R080P7XKSA1 is a 650V N-Channel power MOSFET from Infineon Technologies, part of the CoolMOS P7 series. It delivers a continuous drain current of 37A at Tc and a pulsed drain current of 110A. The maximum drain-source on-resistance is 80mΩ at 10V gate drive, enabling efficient conduction.
This MOSFET is designed for high-voltage switching applications, including power factor correction (PFC) stages, hard-switching PWM stages, and resonant switching stages. It offers excellent commutation ruggedness and low switching losses, making it suitable for adapters, PC power supplies, TV, lighting, server, telecom, and UPS systems.
The device is housed in a through-hole TO-220-3 package (PG-TO220-3) and operates over a junction temperature range of -55°C to 150°C. It features a typical gate charge of 51nC and an input capacitance of 2180pF at 400V drain-source voltage. The body diode has a reverse recovery di/dt of 900 A/µs, and the output capacitance energy is 5.5 µJ at 400V.
The IPP60R080P7XKSA1 is fully qualified according to JEDEC for industrial applications and has an ESD robustness rating of >2kV (HBM).
| Qty | Low | High |
|---|---|---|
| 1+ | $5.80 | $5.80 |
| 10+ | $3.04 | $3.04 |
| 100+ | $2.77 | $2.77 |
| 500+ | $2.34 | $2.34 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 650V.
It is available in a TO-220-3 through-hole package (PG-TO220-3).
The operating junction temperature range is -55°C to 150°C.
It is listed as RoHS3 compliant, but this has not been verified.
The typical gate charge is 51 nC at 10V.
The maximum on-resistance is 80 mΩ at 11.8A drain current and 10V gate voltage.
The ESD robustness is rated >2 kV (HBM).