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IPP60R080P7 The Infineon IPP60R080P7 is a 650V N-channel CoolMOS P7 series power MOSFET. It offers 80mOhm maximum on-resistance and 51nC typical gate charge.
Mfr Part #:

IPP60R080P7

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IPP60R080P7 is a 650V N-channel CoolMOS P7 series power MOSFET. It offers 80mOhm maximum on-resistance and 51nC typical gate charge.
✓ Total Stock: 1,081 pcs

IPP60R080P7 Available from 1 distributor

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1,081 pcs
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IPP60R080P7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Conflict Minerals
Gate Charge
Halogen Free
Industrial Grade
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IPP60R080P7 Description

Short technical summary and product information.

The Infineon IPP60R080P7 is a 600V CoolMOS P7 series N-channel power MOSFET designed for high-voltage applications. This 7th generation platform utilizes superjunction principles to combine fast switching with excellent ease of use, low ringing tendency, and outstanding body diode robustness.

 

Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 650V, a maximum On-Resistance (Rds(on)) of 80mΩ, and a typical Gate Charge (Qg) of 51nC. It also features a pulsed drain current (Id,pulse) of 110A and an energy loss (Eoss) of 5.5µJ at 400V. The device exhibits excellent ESD robustness greater than 2kV (HBM).

 

This MOSFET is suitable for hard and soft switching applications such as PFC and LLC stages, benefiting from reduced switching and conduction losses. It is fully qualified according to JEDEC for industrial applications. The component is housed in a PG-TO 220-3 package suitable for through-hole mounting.

IPP60R080P7 Quick Information

Product Type: MOSFET
Series: CoolMOS P7
Canonical Name: Infineon CoolMOS P7 Series N-channel Power MOSFET
Subcategory: N-Channel Power MOSFET

IPP60R080P7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IPP60R080P7 Features

  • 650V Drain-Source Voltage rating.
  • 80mOhm maximum On-Resistance.
  • 51nC typical Gate Charge.
  • Excellent ESD robustness >2kV.
  • PG-TO 220-3 package for through-hole mounting.

IPP60R080P7 Applications

  • Suitable for PFC and LLC stages.
  • Used in PC Silverbox applications.
  • Ideal for adapter power supplies.
  • Applicable in server power systems.
  • Designed for telecom power modules.

IPP60R080P7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IPP60R080P7?

650V.

What is the on-resistance of the IPP60R080P7?

80mOhm maximum.

What is the typical gate charge?

51nC.

What is the pulsed drain current rating?

110A.

What is the output capacitance energy loss?

5.5µJ at 400V.

What is the body diode di/dt capability?

900A/µs.

What package is the IPP60R080P7 available in?

PG-TO 220-3.

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