| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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321 pcs
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321 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPP60R070CFD7 is a 600V N-channel power MOSFET utilizing Infineon's CoolMOS CFD7 technology. This technology is designed for high voltage power MOSFETs based on the superjunction principle, optimized for soft switching applications such as phase-shift full-bridge (ZVS) and LLC converters. Key features include ultra-fast body diode, low gate charge (Qg) of 67nC typical, and best-in-class reverse recovery charge (Qrr).
With a maximum on-resistance (RDS(on)) of 70mΩ and a pulse drain current (ID,pulse) of 129A, this MOSFET is suitable for applications requiring high efficiency and reliability. The device exhibits improved MOSFET reverse diode dv/dt and diF/dt ruggedness, along with the lowest FOM (RDS(on))*Qg and RDS(on)*Eoss. It is qualified for industrial applications according to JEDEC47/20/22 standards.
The IPP60R070CFD7 is packaged in a PG-TO 220-3 through-hole package, making it suitable for designs requiring robust thermal performance and ease of implementation. Its design enables increased power density solutions for server, telecom, and EV charging applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) at Tj,max is 650V.
The maximum on-resistance (RDS(on)) is 70mΩ.
The typical gate charge (Qg) is 67nC.
The IPP60R070CFD7 is supplied in the PG-TO 220-3 package.
The RoHS status is listed as RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is Level 1.