| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,505 pcs
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1505 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IPP60R060P7 is a high-voltage N-Channel MOSFET from Infineon Technologies, designed for power switching applications. It features a drain-source voltage rating of 600V and a continuous drain current of 48A at case temperature. The maximum on-resistance is 60mOhm at Vgs=10V and Id=15.9A, enabling low conduction losses. The gate charge is 67nC at 10V, and input capacitance is 2895pF at 400V, supporting efficient switching performance.
With a maximum power dissipation of 164W at case temperature, the device is suitable for high-power density designs. The operating junction temperature range is -55°C to 150°C, ensuring reliability in harsh environments. The maximum gate threshold voltage is 4V at 800µA, and the gate-source voltage is rated for ±20V.
The IPP60R060P7 is housed in a TO-220-3 through-hole package, offering easy mounting on PCBs. This MOSFET is commonly used in high-voltage switching power supplies, AC-DC converters, and motor drive inverters where efficiency and robustness are critical.
600V.
TO-220-3 through-hole package.
-55°C to 150°C (junction temperature).
RoHS3 Compliant.
60mOhm maximum at Vgs=10V, Id=15.9A.
67nC maximum at Vgs=10V.
164W at case temperature.