IPP60R040C7XKSA1 N-Channel 600V 50A Power MOSFET from Infineon's CoolMOS C7 series. Features 40mΩ on-resistance and 107nC gate charge in a TO-220-3 package.
Mfr Part #:

IPP60R040C7XKSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel 600V 50A Power MOSFET from Infineon's CoolMOS C7 series. Features 40mΩ on-resistance and 107nC gate charge in a TO-220-3 package.
✓ Total Stock: 241 pcs
$ Price Range: $6.32 - $12.31

IPP60R040C7XKSA1 Available from 1 distributor

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✓ Non-Authorised
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241 pcs
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IPP60R040C7XKSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPP60R040C7XKSA1 Description

Short technical summary and product information.

The IPP60R040C7XKSA1 is an N-Channel power MOSFET from Infineon Technologies, part of the CoolMOS C7 series based on superjunction (SJ) technology. It is designed for high-efficiency power conversion applications, offering a drain-source voltage rating of 600V (650V at Tj,max) and continuous drain current of 50A (73A at Tj<150°C). The device features a low typical on-resistance of 40mΩ at 24.9A and 10V gate drive, and a gate charge of 107nC, enabling fast switching with reduced losses.

 

This MOSFET is suitable for both hard and soft switching topologies such as PFC and LLC converters. It provides increased dv/dt ruggedness (120V/ns) and low output capacitance stored energy (Eoss of 12.6µJ at 400V), contributing to higher system efficiency. The body diode supports a high di/dt of 450A/µs. The device is housed in a TO-220-3 through-hole package (supplier package PG-TO220-3-1) and operates over a junction temperature range of -55°C to 150°C.

 

Typical applications include power factor correction (PFC) stages, pulse-width modulation (PWM) stages, and high-performance SMPS in computing, server, telecom, UPS, and solar inverter systems. The device is rated for industrial grade applications per JEDEC standards. Compliance to RoHS3, REACH, and MSL level 1 is listed but unverified.

IPP60R040C7XKSA1 Quick Information

Product Type: N-Channel Power MOSFET
Series: C7
Canonical Name: IPP60R040C7XKSA1 N-Channel 600V 50A 40mΩ CoolMOS C7 MOSFET in TO-220-3
Subcategory: N-Channel MOSFET

IPP60R040C7XKSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPP60R040C7XKSA1 Estimated Pricing

Qty Low High
1+ $12.31 $12.31
10+ $6.93 $6.93
100+ $6.41 $6.41
500+ $6.32 $6.32

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPP60R040C7XKSA1 Features

  • Rated for 600V drain-source voltage.
  • Supports 50A continuous drain current.
  • Features 40mΩ on-resistance at 10V gate drive.
  • Utilizes CoolMOS C7 superjunction technology.
  • Housed in a TO-220-3 through-hole package.

IPP60R040C7XKSA1 Applications

  • Ideal for power factor correction (PFC) stages.
  • Suitable for high-performance LLC converters.
  • Used in server and telecom power supplies.
  • Applicable in solar inverter and UPS systems.
  • Compatible with high-frequency switching designs.

IPP60R040C7XKSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vds) of the IPP60R040C7XKSA1?

600V, with a maximum of 650V at Tj,max.

What package type is the IPP60R040C7XKSA1 available in?

TO-220-3 (supplier package PG-TO220-3-1) with through-hole mounting.

What is the operating temperature range of this MOSFET?

-55°C to 150°C (TJ).

Is the IPP60R040C7XKSA1 RoHS compliant?

Yes, it is listed as RoHS3 compliant, but this status is unverified.

What is the on-resistance (Rds(on)) of the IPP60R040C7XKSA1?

40 mΩ maximum at 24.9A Id and 10V Vgs.

What is the gate charge (Qg) of this MOSFET?

107 nC typical at 10V Vgs.

What is the continuous drain current rating?

50A at Tc, and 73A at Tj<150°C.

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