IPP320N20N3GXKSA1 N-Channel MOSFET, 200V drain-source breakdown voltage, 34A continuous drain current, 32mOhm maximum on-resistance. TO-220-3 through-hole package.
Mfr Part #:

IPP320N20N3GXKSA1

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET, 200V drain-source breakdown voltage, 34A continuous drain current, 32mOhm maximum on-resistance. TO-220-3 through-hole package.
✓ Total Stock: 23,600 pcs
$ Price Range: $1.30 - $3.56

IPP320N20N3GXKSA1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
21,020 pcs
21020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,580 pcs
2580 pcs On Request 1 On Request On Request On Request On Request On Request

IPP320N20N3GXKSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPP320N20N3GXKSA1 Description

Short technical summary and product information.

The Infineon IPP320N20N3GXKSA1 is an N-channel enhancement mode Power MOSFET from the OptiMOS 3 series, designed for high efficiency and high frequency switching applications. With a drain-source breakdown voltage of 200V and continuous drain current rating of 34A at 25°C, this MOSFET delivers low conduction losses with a maximum on-resistance of 32mOhm at 10Vgs. The gate charge is typically 22nC and maximum 29nC, supporting fast switching. Input capacitance is 2350pF maximum, and output capacitance is 180pF maximum. The device is capable of pulsed drain current up to 136A and avalanche energy of 190mJ. It is housed in a TO-220-3 (PG-TO220-3) through-hole package, offering robust thermal performance with a junction-to-case thermal resistance of 1.1K/W. The operating junction temperature range is -55°C to 175°C. The component is RoHS compliant, halogen-free, and lead-free, suitable for environmentally conscious designs.

IPP320N20N3GXKSA1 Quick Information

Product Type: MOSFET
Series: OptiMOS 3
Canonical Name: Infineon Technologies IPP320N20N3GXKSA1 Power MOSFET
Subcategory: N-Channel MOSFET

IPP320N20N3GXKSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IPP320N20N3GXKSA1 Estimated Pricing

Qty Low High
1+ $3.56 $3.56
10+ $2.31 $2.31
50+ $1.77 $1.77
100+ $1.60 $1.60
500+ $1.30 $1.30

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPP320N20N3GXKSA1 Features

  • N-channel enhancement mode MOSFET.
  • 200V drain-source breakdown voltage.
  • 34A continuous drain current rating.
  • Low 32mOhm maximum on-resistance.
  • RoHS compliant and halogen-free.

IPP320N20N3GXKSA1 Applications

  • Ideal for high-frequency switching power supplies.
  • Used in synchronous rectification circuits.
  • Suitable for DC-DC converter designs.
  • Applicable in motor control applications.

IPP320N20N3GXKSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

200V minimum at Id=1mA.

What is the package type?

TO-220-3 (PG-TO220-3) through-hole package.

What is the operating temperature range?

-55°C to 175°C junction temperature.

Is it RoHS compliant?

Yes, RoHS3 compliant.

What is the continuous drain current?

34A at Tc=25°C, 22A at Tc=100°C.

What is the on-resistance?

Maximum 32mOhm at Vgs=10V, Id=34A.

What is the gate threshold voltage range?

Minimum 2V, typical 3V, maximum 4V at Id=90µA.

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