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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPP220N25NFDAKSA1 is a high-performance N-channel MOSFET suitable for various power electronic applications. It offers a robust drain-source voltage rating of 250V and a continuous drain current capability of 50A, with a pulsed drain current of up to 200A.
This MOSFET features a low on-resistance (Rds On) of 0.022 Ohm, which minimizes conduction losses and improves efficiency in power circuits. The gate-source threshold voltage is 2.5V, facilitating easy driving with compatible gate drive circuitry.
Packaged in the industry-standard TO-220-3 configuration, the IPP220N25NFDAKSA1 is designed for through-hole mounting, making it suitable for a wide range of power supply designs, motor control systems, and other demanding applications where reliable power switching is essential.
Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are noted as low-confidence due to lack of verification.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 250V.
The continuous drain current is 50A.
The maximum gate-source voltage is 20V.
The typical on-resistance is 0.022 Ohm.
The gate-source threshold voltage is 2.5V.
The package is TO-220-3.
It is an N-Channel MOSFET.