IPP200N25N3GXKSA1 N-Channel MOSFET from Infineon Technologies, part of the OptiMOS 3 series. Rated for 250V drain-source voltage and 64A continuous drain current, with a maximum on-resistance of 20mΩ.
Mfr Part #:

IPP200N25N3GXKSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon Technologies, part of the OptiMOS 3 series. Rated for 250V drain-source voltage and 64A continuous drain current, with a maximum on-resistance of 20mΩ.
✓ Total Stock: 21,020 pcs
$ Price Range: $2.84 - $6.71

IPP200N25N3GXKSA1 Available from 1 distributor

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IPP200N25N3GXKSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPP200N25N3GXKSA1 Description

Short technical summary and product information.

The IPP200N25N3GXKSA1 is an N-channel enhancement mode power MOSFET from Infineon's OptiMOS 3 family. It features a drain-source breakdown voltage of 250V and a continuous drain current of 64A at 25°C case temperature (50A at 100°C). The device offers a low typical on-resistance of 17.5 mΩ and a maximum of 20 mΩ at Vgs = 10V. Its gate charge is typically 64 nC, enabling efficient high-frequency switching.

 

Key electrical characteristics include an input capacitance of 5340 pF (typical) and fast switching times: 18 ns turn-on delay, 20 ns rise time, 45 ns turn-off delay, and 12 ns fall time. The MOSFET can handle pulsed drain currents up to 256A and single-pulse avalanche energy of 320 mJ. The body diode provides a continuous forward current of 64A with a typical forward voltage of 1V and reverse recovery time of 170 ns.

 

The device is housed in a through-hole TO-220-3 package (PG-TO220-3) and operates over a junction temperature range of -55°C to 175°C. Thermal resistance from junction to case is 0.5 K/W. It is ideal for high-frequency switching power supplies, synchronous rectification, and DC-DC converter applications. The part is RoHS3 compliant and halogen-free per IEC61249-2-21.

IPP200N25N3GXKSA1 Quick Information

Product Type: N-Channel Power MOSFET
Canonical Name: IPP200N25N3GXKSA1
Subcategory: N-Channel Power MOSFET

IPP200N25N3GXKSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPP200N25N3GXKSA1 Estimated Pricing

Qty Low High
1+ $6.71 $6.71
10+ $3.57 $3.57
100+ $3.26 $3.26
500+ $2.84 $2.84

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPP200N25N3GXKSA1 Features

  • N-channel MOSFET with 250V drain-source voltage.
  • Continuous drain current rated at 64A.
  • Low on-resistance of 20mΩ maximum.
  • High switching speed with low gate charge.
  • Operating temperature range -55°C to 175°C.

IPP200N25N3GXKSA1 Applications

  • Ideal for high-frequency switching power supplies.
  • Used in synchronous rectification circuits.
  • Suitable for DC-DC converters and inverters.
  • Applicable in motor control systems.

IPP200N25N3GXKSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

The drain-source voltage (Vdss) is 250V.

What package is this MOSFET available in?

It comes in a TO-220-3 through-hole package (PG-TO220-3).

What is the operating temperature range?

The operating temperature range is -55°C to 175°C (junction temperature).

Is this component RoHS compliant?

Yes, the part is RoHS3 compliant and halogen-free according to IEC61249-2-21.

What is the continuous drain current rating?

At case temperature 25°C, it is 64A; at 100°C, it is 50A.

What is the drain-source on-resistance?

The maximum on-resistance is 20mΩ at Vgs=10V and Id=64A, with typical value 17.5mΩ.

What is the gate threshold voltage?

The gate threshold voltage ranges from 2V (minimum) to 4V (maximum), with a typical value of 3V.

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