IPP14N03LA The Infineon IPP14N03LA is an N-Channel MOSFET with 25V drain-source voltage and 30A continuous drain current. It features low on-resistance and is ideal for high-frequency DC/DC converters.
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IPP14N03LA

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon IPP14N03LA is an N-Channel MOSFET with 25V drain-source voltage and 30A continuous drain current. It features low on-resistance and is ideal for high-frequency DC/DC converters.
✓ Total Stock: 3,362 pcs

IPP14N03LA Available from 1 distributor

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IPP14N03LA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPP14N03LA Description

Short technical summary and product information.

The Infineon IPP14N03LA is an N-channel logic-level MOSFET from the OptiMOS2 family, designed for high-frequency DC/DC converter applications. It features a maximum drain-source voltage of 25V and a continuous drain current of 30A at 25°C case temperature. The device offers a low typical on-resistance of 11.6mΩ at Vgs=10V and Id=30A, with a maximum of 13.9mΩ. At 4.5V gate drive, the typical on-resistance is 18.5mΩ, enabling logic-level operation.

 

Key electrical characteristics include a total gate charge of 6.3nC typical (8.3nC maximum) at Vgs=5V, input capacitance of 784pF typical, and fast switching times with turn-on delay of 7ns and fall time of 2.6ns. The device is avalanche-rated with a single-pulse energy of 60mJ and offers a reverse diode dv/dt capability of 6kV/µs.

 

The IPP14N03LA is housed in a PG-TO220-3 through-hole package with Pb-free lead plating. It operates over a junction temperature range of -55°C to 175°C and has a thermal resistance junction-to-case of 3.2K/W. The device is RoHS compliant and IEC climatic category 55/175/56.

IPP14N03LA Quick Information

Product Type: N-Channel MOSFET
Series: OptiMOS 2
Canonical Name: Infineon IPP14N03LA N-Channel MOSFET
Subcategory: Power MOSFET

IPP14N03LA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IPP14N03LA Features

  • N-channel logic level MOSFET.
  • 25V drain-source voltage rating.
  • 30A continuous drain current.
  • Low on-resistance of 13.9 mΩ.
  • Suitable for high-frequency switching.

IPP14N03LA Applications

  • Used in high-frequency DC/DC converters.
  • Ideal for power management circuits.
  • Suitable for automotive electronics.
  • Works in switching regulator designs.
  • Applied in load switch applications.

IPP14N03LA FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IPP14N03LA?

The maximum drain-source voltage is 25V.

What is the package type of the IPP14N03LA?

The IPP14N03LA comes in a PG-TO220-3 (TO-220-3) through-hole package.

What is the operating temperature range of the IPP14N03LA?

The operating temperature range is -55°C to 175°C (junction temperature).

Is the IPP14N03LA RoHS compliant?

Yes, the IPP14N03LA is RoHS compliant with Pb-free lead plating.

What is the gate threshold voltage of the IPP14N03LA?

The gate threshold voltage is typically 1.6V, with a range of 1.2V to 2V.

What is the on-resistance of the IPP14N03LA at 10V gate drive?

The typical on-resistance is 11.6mΩ, maximum 13.9mΩ at Vgs=10V, Id=30A.

What is the total gate charge of the IPP14N03LA?

The total gate charge is 6.3nC typical, 8.3nC maximum at Vgs=5V.

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