| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
103,020 pcs
|
103020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon IPP147N12N3GXKSA1 is a N-channel power MOSFET designed for high-efficiency power conversion. It features a drain-source voltage of 120V and continuous drain current of 56A (at ambient temperature). The device has a maximum on-resistance of 14.7 mOhm at 10V gate drive, ensuring low conduction losses. Gate charge of 49 nC enables fast switching. The MOSFET is housed in a PG-TO220-3 through-hole package, providing excellent thermal performance with junction-to-case thermal resistance of 0.5 K/W. It operates over a junction temperature range of -55°C to 175°C. This device is suitable for high-frequency switching and synchronous rectification applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.73 | $2.73 |
| 10+ | $1.76 | $1.76 |
| 50+ | $1.34 | $1.34 |
| 100+ | $1.21 | $1.21 |
| 500+ | $0.97 | $0.97 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
120V
56A
14.7 mOhm max at 10V gate drive
49 nC max
-55°C to 175°C
TO-220-3 through-hole
Yes, RoHS3 compliant (unverified)