IPP139N08N3G IPP139N08N3G is an N-Channel power MOSFET from Infineon Technologies, rated for 80V drain-source voltage and 45A continuous drain current. It features a low on-resistance of 13.9mOhm maximum at 10V gate drive.
Mfr Part #:

IPP139N08N3G

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IPP139N08N3G is an N-Channel power MOSFET from Infineon Technologies, rated for 80V drain-source voltage and 45A continuous drain current. It features a low on-resistance of 13.9mOhm maximum at 10V gate drive.
✓ Total Stock: 895 pcs
$ Price Range: $0.89

IPP139N08N3G Available from 1 distributor

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895 pcs
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IPP139N08N3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPP139N08N3G Description

Short technical summary and product information.

The IPP139N08N3G is an N-Channel power MOSFET manufactured by Infineon Technologies. It is designed for general-purpose switching applications requiring high efficiency and reliability. With a maximum drain-to-source voltage of 80V and a continuous drain current rating of 45A, it suits medium-power circuits.

 

Key electrical characteristics include a maximum on-resistance of 13.9mOhm at a gate drive of 10V and 45A drain current, ensuring low conduction losses. The gate charge is specified as 25nC at 10V, and the input capacitance is 1730pF at 40V drain voltage. These parameters indicate moderate switching speed capabilities. The device can handle a maximum power dissipation of 79W at case temperature. It operates over a wide junction temperature range of -55°C to 175°C.

 

The MOSFET is housed in a TO-220-3 through-hole package, which allows for easy mounting on a heatsink for thermal management. The supplier device package is PG-TO220-3. This through-hole package is suitable for prototyping and applications where ruggedness and replaceability are important.

IPP139N08N3G Quick Information

Product Type: N-Channel MOSFET
Series: OptiMOS 3
Canonical Name: Infineon IPP139N08N3G N-Channel MOSFET, 80V, 45A, TO-220-3
Subcategory: Single MOSFET

IPP139N08N3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPP139N08N3G Estimated Pricing

Qty Low High
337+ $0.89 $0.89

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPP139N08N3G Features

  • N-Channel MOSFET with 80V drain-source rating.
  • Maximum continuous drain current of 45A.
  • Low on-resistance of 13.9mOhm at 10V gate.
  • Gate charge of 25nC for efficient switching.
  • Operating temperature range -55°C to 175°C.

IPP139N08N3G Applications

  • Suitable for switching power supplies.
  • Used in DC-DC converter circuits.
  • Motor control and drive applications.
  • Power management in industrial systems.

IPP139N08N3G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

The maximum drain-to-source voltage is 80V.

What is the package type?

The component is housed in a TO-220-3 through-hole package (PG-TO220-3).

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is this component RoHS compliant?

Yes, it is listed as RoHS3 Compliant, though this data is unverified.

What is the on-resistance?

The maximum on-resistance is 13.9mOhm at 45A drain current and 10V gate drive.

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