| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,888 pcs
|
12888 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Input Capacitance | |
| Medical Grade | |
| Military Grade | |
| Power Dissipation | |
| Reverse Recovery Time | |
| Storage Temperature | |
| Tape & Reel |
The Infineon IPP120P04P4L-03 is a P-channel OptiMOS®-P2 power transistor designed for high-performance applications. It features enhancement mode operation and logic-level gate drive.
Key electrical characteristics include a drain-source breakdown voltage of -40V and a maximum continuous drain current of -120A at 25°C. The device offers low on-state resistance, with values as low as 3.1 mΩ at VGS=-10V, ID=-100A (SMD version). Dynamic characteristics include input capacitance of 11380 pF and output capacitance of 3410 pF.
Thermal performance is supported by a junction-to-case thermal resistance of 1.1 K/W, allowing for a power dissipation of 136W at 25°C. The operating temperature range is -55°C to +175°C. The transistor is AEC qualified and rated for 175°C operating temperature.
Available in PG-TO220-3-1, PG-TO262-3-1, and PG-TO263-3-2 packages, this green package component is RoHS compliant. It is 100% avalanche tested.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-40 V
-1.7 V
-120 A
136 W
-55 ... +175 °C
1.1 K/W
PG-TO220-3-1, PG-TO262-3-1, PG-TO263-3-2