| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,463 pcs
|
1463 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Package / Case | |
| Power Dissipation | |
| SVHC Present |
The Infineon IPP120N20NFD is a high-performance N-channel MOSFET belonging to the OptiMOSTM family, specifically the OptiMOSTMFD series. It is designed for power management applications requiring robust performance and reliability.
Key electrical characteristics include a maximum drain-source voltage (VDS) of 200V and a maximum continuous drain current (ID) of 84A at 25°C, with a reduced current of 60A at 100°C. The on-resistance (RDS(on)) is a low 12 mΩ at a gate-source voltage of 10V and a drain current of 42A. It also features a fast diode with reduced Qrr, optimized for hard commutation ruggedness.
This MOSFET operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 300W at 25°C. The component is housed in a PG-TO220-3 package, suitable for through-hole mounting.
Environmental compliance includes RoHS3 compliance and Halogen-free status, meeting stringent industry standards.
The maximum drain-source voltage (VDS) for the IPP120N20NFD is 200V.
The maximum continuous drain current (ID) is 84A at 25°C and 60A at 100°C.
The maximum on-resistance (RDS(on)) is 12 mΩ.
The IPP120N20NFD is supplied in a PG-TO220-3 package.
The operating temperature range is -55°C to 175°C.
Yes, the IPP120N20NFD is RoHS3 compliant.
Yes, the IPP120N20NFD is Halogen-free.