IPP110N20N3GXKSA1 N-Channel OptiMOS 3 power MOSFET with 200V drain-source breakdown voltage and 88A continuous drain current in a TO-220-3 through-hole package.
Mfr Part #:

IPP110N20N3GXKSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel OptiMOS 3 power MOSFET with 200V drain-source breakdown voltage and 88A continuous drain current in a TO-220-3 through-hole package.
✓ Total Stock: 86 pcs
$ Price Range: $2.14 - $5.77

IPP110N20N3GXKSA1 Available from 1 distributor

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IPP110N20N3GXKSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPP110N20N3GXKSA1 Description

Short technical summary and product information.

The IPP110N20N3GXKSA1 is an N-channel enhancement mode power MOSFET from Infineon's OptiMOS 3 family. It features a drain-source breakdown voltage of 200V and a continuous drain current of 88A at 25°C case temperature (63A at 100°C). Typical on-resistance is 9.9mOhm with a maximum of 11mOhm at Vgs=10V and Id=88A.

 

Optimized for high-frequency switching applications, the device offers a typical gate charge of 65nC (87nC maximum), input capacitance of 5340pF typical, and fast switching times: 18ns turn-on delay, 26ns rise time, 41ns turn-off delay, and 11ns fall time. The gate threshold voltage ranges from 2V minimum to 4V maximum.

 

The MOSFET is housed in a PG-TO220-3 through-hole package and operates over a junction temperature range of -55°C to 175°C. It is RoHS compliant with Pb-free lead plating and halogen-free according to IEC61249-2-21. Single-pulse avalanche energy capability is 560mJ, and the reverse diode supports a dv/dt of 10kV/µs.

IPP110N20N3GXKSA1 Quick Information

Product Type: Power MOSFET
Series: OptiMOS 3
Canonical Name: Infineon Technologies IPP110N20N3GXKSA1 N-Channel Power MOSFET
Subcategory: Power MOSFET

IPP110N20N3GXKSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IPP110N20N3GXKSA1 Estimated Pricing

Qty Low High
1+ $5.77 $5.77
10+ $3.45 $3.45
100+ $2.78 $2.78
500+ $2.31 $2.31
1,000+ $2.14 $2.14

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPP110N20N3GXKSA1 Features

  • N-channel OptiMOS 3 power MOSFET device.
  • 200V drain-source breakdown voltage rating.
  • 88A continuous drain current at 25°C.
  • Low on-resistance: 11mOhm maximum at 10V.
  • Fast switching with 65nC typical gate charge.

IPP110N20N3GXKSA1 Applications

  • Ideal for high-frequency switching power supplies.
  • Used in synchronous rectification circuits.
  • Suitable for DC-DC converters and inverters.
  • Applied in telecom and server power systems.

IPP110N20N3GXKSA1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the IPP110N20N3GXKSA1?

The drain-source breakdown voltage is 200V minimum at Vgs=0V, Id=1mA.

What is the maximum continuous drain current?

88A at Tc=25°C and 63A at Tc=100°C.

What is the on-resistance (Rds on) of this MOSFET?

Typical is 9.9mOhm and maximum is 11mOhm at Vgs=10V, Id=88A.

What package does the IPP110N20N3GXKSA1 come in?

It is supplied in a PG-TO220-3 through-hole package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the IPP110N20N3GXKSA1 RoHS compliant?

Yes, it is RoHS compliant with Pb-free lead plating per the datasheet.

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