| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,580 pcs
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2580 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
217 pcs
|
217 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
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| Power Dissipation | |
| SVHC Present | |
| Type |
The Infineon IPP110N20N3G is a power MOSFET belonging to the N-Channel type. It is engineered for demanding applications requiring efficient power handling. Key electrical specifications include a drain-source voltage (Vdss) of 150V and a continuous drain current (Id) of 100A.
This MOSFET boasts a power dissipation (Pd) of 300W, indicating its capability to handle significant power loads. The gate threshold voltage (Vgs(th)) is typically 4V at 270uA, and the drain-source on-resistance (Rds(on)) is a low 7.2mΩ at 10V Vgs and 100A Id. These characteristics make it suitable for various power electronics designs.
The component is housed in a TO-263-3 package, facilitating surface-mount integration. Its RoHS 3 compliance status suggests adherence to environmental regulations regarding hazardous substances.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 150V.
The continuous drain current (Id) is 100A.
The power dissipation (Pd) is 300W.
The gate threshold voltage (Vgs(th)) is typically 4V at 270uA.
The drain-source on-resistance (Rds(on)) is typically 7.2mΩ at 10V Vgs and 100A Id.
The IPP110N20N3G is a 1 N-Channel MOSFET.
The IPP110N20N3G is in a TO-263-3 package.