IPP110N20N3G The Infineon IPP110N20N3G is an N-Channel MOSFET designed for high-performance power applications. It offers a 150V drain-source voltage and a continuous drain current of 100A.
Mfr Part #:

IPP110N20N3G

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IPP110N20N3G is an N-Channel MOSFET designed for high-performance power applications. It offers a 150V drain-source voltage and a continuous drain current of 100A.
✓ Total Stock: 2,797 pcs
$ Price Range: $2.40

IPP110N20N3G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,580 pcs
2580 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
217 pcs
217 pcs On Request 1 On Request On Request 23+ On Request On Request

IPP110N20N3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Lead Style
Power Dissipation
SVHC Present
Type

IPP110N20N3G Description

Short technical summary and product information.

The Infineon IPP110N20N3G is a power MOSFET belonging to the N-Channel type. It is engineered for demanding applications requiring efficient power handling. Key electrical specifications include a drain-source voltage (Vdss) of 150V and a continuous drain current (Id) of 100A.

 

This MOSFET boasts a power dissipation (Pd) of 300W, indicating its capability to handle significant power loads. The gate threshold voltage (Vgs(th)) is typically 4V at 270uA, and the drain-source on-resistance (Rds(on)) is a low 7.2mΩ at 10V Vgs and 100A Id. These characteristics make it suitable for various power electronics designs.

 

The component is housed in a TO-263-3 package, facilitating surface-mount integration. Its RoHS 3 compliance status suggests adherence to environmental regulations regarding hazardous substances.

IPP110N20N3G Quick Information

Product Type: N-Channel MOSFET
Series: IPP
Canonical Name: Infineon IPP110N20N3G N-Channel MOSFET
Subcategory: N-Channel

IPP110N20N3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPP110N20N3G Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPP110N20N3G Features

  • 150V drain-source voltage rating.
  • 100A continuous drain current capability.
  • Low 7.2mΩ on-resistance at 10V/100A.
  • 300W power dissipation capacity.
  • TO-263-3 surface-mount package.

IPP110N20N3G Applications

  • Suitable for power supplies.
  • Used in motor drive circuits.
  • Applicable to industrial equipment.
  • Efficient power management systems.

IPP110N20N3G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the IPP110N20N3G?

The drain-source voltage (Vdss) is 150V.

What is the continuous drain current for the IPP110N20N3G?

The continuous drain current (Id) is 100A.

What is the power dissipation of the IPP110N20N3G?

The power dissipation (Pd) is 300W.

What is the gate threshold voltage of the IPP110N20N3G?

The gate threshold voltage (Vgs(th)) is typically 4V at 270uA.

What is the on-resistance of the IPP110N20N3G?

The drain-source on-resistance (Rds(on)) is typically 7.2mΩ at 10V Vgs and 100A Id.

What type of MOSFET is the IPP110N20N3G?

The IPP110N20N3G is a 1 N-Channel MOSFET.

What package is the IPP110N20N3G in?

The IPP110N20N3G is in a TO-263-3 package.

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