| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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18 pcs
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18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Vgs(th) (Max) @ Id |
The Infineon IPP093N06N3GXKSA1 is a high-performance N-Channel MOSFET designed for various power applications. It features a maximum drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 50A at 25°C.
This MOSFET offers a low on-resistance (Rds On) of 9.3mOhm at 50A and 10V Vgs, ensuring efficient power transfer. The gate charge (Qg) is 36nC at 10V, and the input capacitance (Ciss) is 2900pF at 30V. The maximum gate-to-source voltage (Vgs) is ±20V.
With a maximum power dissipation of 71W (Tc) and an operating temperature range of -55°C to 175°C (TJ), the IPP093N06N3GXKSA1 is suitable for demanding environments. It is mounted using a through-hole method and comes in a standard TO-220-3 package (PG-TO220-3).
Key electrical parameters include a gate threshold voltage (Vgs(th)) of 4V at 34µA.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 60V.
The continuous drain current (Id) at 25°C is 50A.
The maximum on-resistance (Rds On) is 9.3mOhm when measured at 50A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 175°C.
The IPP093N06N3GXKSA1 is supplied in a TO-220-3 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.