| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,020 pcs
|
3020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Avalanche Energy, Single Pulse (Id = 73 A, Rg = 25 Ω) | |
| Continuous Drain Current (Nominal @ Tc=100 °C) | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source On-State Resistance (Typical/Maximum @ Vgs = 6 V, Id = 36 A) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Fall Time (Vdd = 50 V, Vgs = 10 V, Id = 73 A, Rg = 1.6 Ω) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Resistance | |
| Gate to Drain Charge (Vgs = 10 V) | |
| Gate to Source Charge (Vgs = 10 V) | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Vds = 50 V, Vgs = 0 V, f = 1 MHz) | |
| Power Dissipation (Max) | |
| Pulsed Drain Current (Tc=25°C) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Transfer Capacitance (Vds = 50 V, Vgs = 0 V, f = 1 MHz) | |
| Rise Time (Vdd = 50 V, Vgs = 10 V, Id = 73 A, Rg = 1.6 Ω) | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Thermal Resistance (Junction-Ambient) (Maximum @ 6 cm² cooling area) | |
| Thermal Resistance (Junction-Ambient) (Maximum @ minimal footprint) | |
| Thermal Resistance Junction-Case | |
| Transconductance (Id = 80 A) | |
| Turn-Off Delay Time (Vdd = 50 V, Vgs = 10 V, Id = 73 A, Rg = 1.6 Ω) | |
| Turn-On Delay Time (Vdd = 50 V, Vgs = 10 V, Id = 73 A, Rg = 1.6 Ω) | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon IPP086N10N3GXKSA1 is an N-Channel enhancement mode power MOSFET from the OptiMOS 3 series. It utilizes advanced MOSFET technology to deliver low on-resistance and high switching performance.
This MOSFET features a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 80A at 25°C case temperature, with a maximum pulsed drain current of 320A. The typical drain-source on-resistance (Rds(on)) is 7.4 mOhm at Vgs=10V, with a maximum of 8.6 mOhm. The gate threshold voltage ranges from 2V to 3.5V. The device is capable of up to 125W power dissipation at 25°C case temperature.
The device is suitable for high-frequency switching and synchronous rectification applications. It has a low gate charge (Qg typ 55nC) and fast switching times (turn-on delay 18ns, rise time 42ns, turn-off delay 31ns, fall time 8ns). The operating junction temperature range is -55°C to 175°C.
The MOSFET is supplied in a TO-220-3 through-hole package (PG-TO220-3) for easy mounting on heatsinks. It is RoHS compliant and halogen-free according to IEC61249-2-21. The device is Pb-free lead plating.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.05 | $3.05 |
| 10+ | $1.97 | $1.97 |
| 50+ | $1.51 | $1.51 |
| 100+ | $1.36 | $1.36 |
| 500+ | $1.10 | $1.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
TO-220-3 through-hole package (PG-TO220-3).
-55°C to 175°C junction temperature.
Yes, RoHS3 compliant.
80A.
7.4 mOhm typical, maximum 8.6 mOhm.
2V to 3.5V.