| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,243 pcs
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1243 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPP076N15N5AKSA1 is a high-performance N-channel MOSFET. It is designed for power switching applications and offers a robust set of electrical characteristics.
Key electrical specifications include a maximum drain-source voltage (Vds) of 150V and a continuous drain current (Id) of 76A. The MOSFET has a typical gate-source threshold voltage (Vgs(th)) of 2.5V and a gate-source voltage (Vgs) rating of ±15V. Its on-resistance (Rds(on)) is rated at 7.6mOhm, contributing to efficient power transfer.
This component is housed in a PG-TO220-3 package, suitable for through-hole mounting. The maximum junction temperature (Tj) is 150°C, indicating its capability for operation in demanding thermal environments.
The IPP076N15N5AKSA1 is part of Infineon's extensive portfolio of power semiconductor devices, offering reliability and performance for various industrial and automotive applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.73 | $4.73 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 150V.
The continuous drain current is 76A.
The package type is PG-TO220-3.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.