| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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225 pcs
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225 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IPP06N03LA is an N-channel power MOSFET from Infineon's OptiMOS 2 series, designed for high-efficiency switching applications. It features a drain-source breakdown voltage of 25V and a continuous drain current rating of 50A at 25°C case temperature. The device offers a low maximum on-resistance of 6.2mΩ at Vgs=10V and 9.9mΩ at Vgs=4.5V, enabling logic-level gate drive operation.
Key electrical characteristics include a typical gate threshold voltage of 1.6V, input capacitance of 1995pF, and total gate charge of 16nC, making it suitable for high-frequency DC/DC converters. The MOSFET is rated for pulsed drain current up to 350A and single-pulse avalanche energy of 225mJ. The junction-to-case thermal resistance is 1.8K/W, with an operating temperature range of -55°C to 175°C.
The device is housed in a through-hole TO-220-3 package (PG-TO220-3) and is available in alternate SMD (D2PAK) and through-hole (TO262) variants. It is suitable for power management, DC/DC converters, and other switched-mode power supply designs.
The minimum drain-source breakdown voltage is 25V.
The continuous drain current is 50A at case temperature 25°C.
The maximum on-resistance is 6.2mΩ at Vgs=10V, Id=30A, and 9.9mΩ at Vgs=4.5V.
The device is available in a through-hole TO-220-3 package (PG-TO220-3).
The operating junction temperature range is -55°C to 175°C.
The gate threshold voltage is typically 1.6V, with a minimum of 1.2V and maximum of 2V at Id=40µA.
The part is listed as RoHS3 Compliant, but this status is unverified.