IPP06CNE8N G N-Channel 85V 100A power MOSFET in a TO220-3 package. Features very low on-resistance and 175°C operating temperature.
Mfr Part #:

IPP06CNE8N G

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel 85V 100A power MOSFET in a TO220-3 package. Features very low on-resistance and 175°C operating temperature.
✓ Total Stock: 2,910 pcs
$ Price Range: $1.42

IPP06CNE8N G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,910 pcs
2910 pcs On Request 1 On Request On Request 07+ On Request On Request

IPP06CNE8N G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPP06CNE8N G Description

Short technical summary and product information.

The IPP06CNE8N G is an N-Channel enhancement mode power MOSFET from Infineon's OptiMOS 2 family. It is designed for high-frequency switching and synchronous rectification applications. The device is rated for a drain-source voltage of 85V and a continuous drain current of 100A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance of 6.5 mOhm at VGS=10V and ID=100A, with a typical value of 5.0 mOhm. The gate threshold voltage ranges from 2V to 4V. The device features low gate charge (103 nC typical) and low input capacitance (6950 pF typical), making it suitable for efficient high-speed switching.

 

The IPP06CNE8N G is offered in the PG-TO220-3 package, a through-hole package suitable for various mounting and thermal management solutions. It is qualified according to JEDEC standards, is RoHS compliant, and halogen-free according to IEC61249-2-21. The maximum junction temperature is 175°C.

IPP06CNE8N G Quick Information

Product Type: MOSFET
Series: OptiMOS 2
Canonical Name: IPP06CNE8N G
Subcategory: Single MOSFETs

IPP06CNE8N G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 3
REACH Status: Compliant
Lead Free: Yes

IPP06CNE8N G Estimated Pricing

Qty Low High
500+ $1.42 $1.42

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPP06CNE8N G Features

  • N-Channel 85V 100A power MOSFET.
  • Very low on-resistance of 6.5 mOhm.
  • 175°C maximum junction temperature.
  • RoHS compliant and halogen-free.
  • Optimized for high-frequency switching.

IPP06CNE8N G Applications

  • Ideal for high-frequency DC-DC converters.
  • Used in synchronous rectification circuits.
  • Suitable for power management in servers.

IPP06CNE8N G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vdss) of the IPP06CNE8N G?

The maximum drain-source voltage (Vdss) is 85V.

What is the maximum continuous drain current?

The maximum continuous drain current is 100A at a case temperature of 25°C.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What is the on-resistance (Rds(on)) of this MOSFET?

The maximum on-resistance is 6.5 mOhm at VGS=10V and ID=100A for the TO220-3 package.

Is the IPP06CNE8N G RoHS compliant?

Yes, the datasheet states it is Pb-free lead plating and RoHS compliant.

What is the package type for the IPP06CNE8N G?

The IPP06CNE8N G is offered in the PG-TO220-3 package.

What is the maximum power dissipation?

The maximum power dissipation is 214W at a case temperature of 25°C.

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