| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,995 pcs
|
5995 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPP06CN10N G is an N-Channel power MOSFET from Infineon Technologies, designed for high-efficiency power switching applications. It features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 100A at Tc=25°C, making it suitable for high-current circuits.
The device offers a low maximum on-resistance (Rds(on)) of 6.5mOhm at Vgs=10V and Id=100A, minimizing conduction losses. The gate threshold voltage (Vgs(th)) is 4V maximum at Id=180µA, and the maximum gate-source voltage is ±20V. Total gate charge (Qg) is 139nC at Vgs=10V, and input capacitance (Ciss) is 9200pF at Vds=50V, indicating moderate switching speed capability.
Packaged in a TO-220-3 (PG-TO220-3) through-hole package, the IPP06CN10N G supports easy mounting on PCBs or heatsinks. It operates over a junction temperature range of -55°C to 175°C, with maximum power dissipation of 214W at Tc=25°C. Drive voltage recommended is 10V for optimal Rds(on).
| Qty | Low | High |
|---|---|---|
| 500+ | $1.78 | $1.78 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 100V.
It is available in a TO-220-3 (PG-TO220-3) through-hole package.
The operating junction temperature range is -55°C to 175°C.
It is indicated as RoHS3 compliant, but this is unverified and low confidence.
The maximum continuous drain current (Id) is 100A at Tc=25°C.
The maximum Rds(on) is 6.5mOhm at Vgs=10V and Id=100A.
The total gate charge (Qg) is 139nC maximum at Vgs=10V.