| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,512 pcs
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4512 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IPP04N03LA is an N-channel MOSFET from Infineon's OptiMOS 2 series designed for high-frequency DC/DC converter applications. It features a drain-source breakdown voltage of 25V and a continuous drain current rating of 80A at both case temperatures of 25°C and 100°C. This logic-level device can be fully enhanced with gate drives as low as 4.5V, achieving a maximum on-resistance of 6.7 mΩ. With a 10V gate drive, the on-resistance drops to just 4.2 mΩ typical, minimizing conduction losses.
Key electrical characteristics include a low gate charge of 32 nC (total at Vgs=5V) and fast switching times with typical turn-on delay of 13 ns and fall time of 5.4 ns, making it suitable for high-efficiency, high-frequency power conversion. The device is avalanche-rated with a single-pulse avalanche energy of 290 mJ and has a reverse diode dv/dt capability of 6 kV/µs, providing robustness in inductive switching environments.
Packaged in a standard TO-220-3 through-hole package (PG-TO220-3), the IPP04N03LA offers excellent thermal performance with a junction-to-case thermal resistance of 1.4 K/W maximum. It operates over a junction temperature range of -55°C to 175°C. The part is RoHS3 compliant and features Pb-free lead plating, suitable for lead-free soldering processes.
The drain-source breakdown voltage is 25V.
It is housed in a TO-220-3 through-hole package (PG-TO220-3).
The junction temperature range is -55°C to 175°C.
Yes, it is RoHS3 compliant and lead-free with Pb-free plating.
The gate threshold voltage range is 1.2V typical to 2V maximum at Id=60µA.
Maximum on-resistance is 4.2 mΩ at Vgs=10V and Id=55A, and 6.7 mΩ at Vgs=4.5V.
Continuous drain current is 80A at both Tc=25°C and Tc=100°C.