| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
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The IPP048N04NG is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. It is designed for high-efficiency power conversion applications. The device offers a maximum drain-source voltage of 40V and a continuous drain current of 70A at case temperature. The on-resistance is typically 4.8mOhm at 70A and 10V gate drive. The gate threshold voltage is 4V maximum at 200µA drain current. The MOSFET features a maximum gate charge of 41nC at 10V and input capacitance of 3300pF at 25V drain-source. It is housed in a through-hole TO-220-3 package with a supplier package designation PG-TO220-3-1. The operating junction temperature range is -55°C to 175°C, and maximum power dissipation is 79W at case temperature. This MOSFET is suitable for applications such as DC-DC converters, motor control, and power management in industrial and automotive systems.
40V.
TO-220-3 (through-hole).
-55°C to 175°C (junction).
RoHS3 Compliant (unverified).
70A at case temperature.
4.8mOhm at 70A and 10V gate drive.
41nC at 10V gate-source.