| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
80 pcs
|
80 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon IPP042N03LGXKSA1 is a single N-Channel MOSFET from the OptiMOS™ series. It features a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 70A at 25°C. The on-resistance (Rds On) is a maximum of 4.2mOhm at 30A and 10V gate-source voltage.
This MOSFET has a gate threshold voltage (Vgs(th)) of 2.2V at 250µA and a maximum gate-source voltage (Vgs) of ±20V. Input capacitance (Ciss) is up to 3900pF at 15V. The device offers a maximum power dissipation of 79W at the case temperature.
Designed for through-hole mounting, the IPP042N03LGXKSA1 comes in a standard TO-220-3 package. It operates within a wide temperature range of -55°C to 175°C junction temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 30V.
The continuous drain current (Id) is 70A at 25°C.
The maximum on-resistance (Rds On) is 4.2mOhm at 30A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 175°C (junction temperature).
It is supplied in a TO-220-3 package for through-hole mounting.