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IPP041N12N3G The Infineon IPP041N12N3G is an N-Channel MOSFET with a 120V drain-source breakdown voltage and 120A continuous drain current. It is housed in a through-hole TO-220-3 package.
Mfr Part #:

IPP041N12N3G

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IPP041N12N3G is an N-Channel MOSFET with a 120V drain-source breakdown voltage and 120A continuous drain current. It is housed in a through-hole TO-220-3 package.
✓ Total Stock: 29 pcs
$ Price Range: $2.93

IPP041N12N3G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
29 pcs
On Request
29 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPP041N12N3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge
Mounting Style
Number of Channels
Operating Temperature
Power Dissipation
Technology
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IPP041N12N3G Description

Short technical summary and product information.

The Infineon IPP041N12N3G is a power MOSFET designed for various electronic applications. It features an N-Channel configuration with a drain-source breakdown voltage of 120V and a continuous drain current capability of 120A.

 

The MOSFET exhibits a low drain-source on-resistance of 3.5 mOhms, contributing to efficient power handling. The gate-source threshold voltage is rated at 2V, and the maximum gate-source voltage is 20V. It has a gate charge of 211 nC and a power dissipation of 300W.

 

This component operates within a temperature range of -55°C to +175°C. It is constructed using Silicon technology and is designed in an enhancement mode.

 

The IPP041N12N3G is packaged in a TO-220-3 case and utilizes a through-hole mounting style. It is supplied in a tube package.

IPP041N12N3G Quick Information

Product Type: MOSFET
Series: OptiMOS
Canonical Name: Infineon IPP041N12N3G N-Channel MOSFET
Subcategory: N-Channel MOSFET

IPP041N12N3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPP041N12N3G Estimated Pricing

Qty Low High
1+ $2.93 $2.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPP041N12N3G Features

  • 120V drain-source breakdown voltage.
  • 120A continuous drain current.
  • 3.5 mOhms drain-source on-resistance.
  • Through-hole TO-220-3 package.
  • Wide operating temperature range.

IPP041N12N3G Applications

  • Used in high-efficiency power supplies.
  • Suitable for motor control circuits.
  • Ideal for DC-DC converters.
  • Applied in automotive power systems.

IPP041N12N3G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the IPP041N12N3G?

120V.

What is the continuous drain current rating?

120A.

What is the on-resistance?

3.5mOhms.

What is the gate charge?

211nC.

What is the operating temperature range?

-55°C to +175°C.

What package does the IPP041N12N3G come in?

TO-220-3.

What is the mounting style?

Through Hole.

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